P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Width
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.65mm
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 274,333
komad (u Tubi od 50) (bez PDV-a)
RSD 329,20
komad (u Tubi od 50) (s PDV-om)
50
RSD 274,333
komad (u Tubi od 50) (bez PDV-a)
RSD 329,20
komad (u Tubi od 50) (s PDV-om)
50
Kupujte na veliko
| količina | Jedinična cena | Po cev |
|---|---|---|
| 50 - 50 | RSD 274,333 | RSD 13.717 |
| 100 - 200 | RSD 250,819 | RSD 12.541 |
| 250+ | RSD 246,90 | RSD 12.345 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Width
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.65mm
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda