N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
431 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Transistor Material
Si
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Minimum Operating Temperature
-55 °C
Height
21.1mm
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 56,56
KM 56,56 Each (bez PDV-a)
KM 66,18
KM 66,18 Each (s PDV-om)
Standard
1
KM 56,56
KM 56,56 Each (bez PDV-a)
KM 66,18
KM 66,18 Each (s PDV-om)
Standard
1
Kupujte na veliko
| količina | Jedinična cijena |
|---|---|
| 1 - 1 | KM 56,56 |
| 2+ | KM 55,65 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
431 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Transistor Material
Si
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Minimum Operating Temperature
-55 °C
Height
21.1mm
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda