N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1

RS kataloški broj:: 906-4384Probna marka: InfineonProizvođački broj:: IPW65R190CFDFKSA1
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.13mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

21.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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KM 7,138

Each (Supplied in a Tube) (bez PDV-a)

KM 8,351

Each (Supplied in a Tube) (s PDV-om)

N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Odaberite vrstu pakovanja

KM 7,138

Each (Supplied in a Tube) (bez PDV-a)

KM 8,351

Each (Supplied in a Tube) (s PDV-om)

N-Channel MOSFET, 17.5 A, 650 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

17.5 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ CFD

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.13mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Width

5.21mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

21.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Detalji o proizvodu

Infineon CoolMOS™ CFD Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više