Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 6,705
Each (In a Tube of 50) (bez PDV-a)
KM 7,845
Each (In a Tube of 50) (s PDV-om)
50
KM 6,705
Each (In a Tube of 50) (bez PDV-a)
KM 7,845
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 6,705 | KM 335,25 |
100 - 200 | KM 5,515 | KM 275,77 |
250 - 450 | KM 5,407 | KM 270,36 |
500 - 950 | KM 5,191 | KM 259,55 |
1000+ | KM 4,975 | KM 248,73 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V