Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 4,758
Each (In a Pack of 10) (bez PDV-a)
KM 5,567
Each (In a Pack of 10) (s PDV-om)
10
KM 4,758
Each (In a Pack of 10) (bez PDV-a)
KM 5,567
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 40 | KM 4,758 | KM 47,58 |
50 - 90 | KM 4,001 | KM 40,01 |
100 - 240 | KM 3,936 | KM 39,36 |
250 - 490 | KM 3,828 | KM 38,28 |
500+ | KM 3,655 | KM 36,55 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V