N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRF540ZPBF

RS kataloški broj:: 124-9001robna marka: InfineonProizvođački broj:: IRF540ZPBF
brand-logo
Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.54mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Mexico

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 2,358

Each (In a Tube of 50) (bez PDV-a)

KM 2,759

Each (In a Tube of 50) (s PDV-om)

N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRF540ZPBF

50

Dostupno u više komada 50
50KM 117,88
100KM 188,17
150KM 282,26
200KM 376,34
250KM 459,62
300KM 551,54
350KM 643,46
400KM 735,39
450KM 827,31
500KM 886,79
550KM 975,47
600KM 1.064,15
650KM 1.152,83
700KM 1.241,50
750KM 1.330,18

KM 2,358

Each (In a Tube of 50) (bez PDV-a)

KM 2,759

Each (In a Tube of 50) (s PDV-om)

N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRF540ZPBF
Informacije o stanju skladišta trenutno nisu dostupne.

50

Dostupno u više komada 50
50KM 117,88
100KM 188,17
150KM 282,26
200KM 376,34
250KM 459,62
300KM 551,54
350KM 643,46
400KM 735,39
450KM 827,31
500KM 886,79
550KM 975,47
600KM 1.064,15
650KM 1.152,83
700KM 1.241,50
750KM 1.330,18

Kupujte na veliko

količinaJedinična cijenaPo cijev
50 - 50KM 2,358KM 117,88
100 - 200KM 1,882KM 94,09
250 - 450KM 1,838KM 91,92
500 - 1200KM 1,774KM 88,68
1250+KM 1,709KM 85,43

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

27 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.69mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.54mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

8.77mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Mexico

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više