Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,536
Each (On a Reel of 4000) (bez PDV-a)
KM 1,797
Each (On a Reel of 4000) (s PDV-om)
4000
KM 1,536
Each (On a Reel of 4000) (bez PDV-a)
KM 1,797
Each (On a Reel of 4000) (s PDV-om)
4000
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si