Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,79
Each (In a Pack of 10) (bez PDV-a)
KM 3,264
Each (In a Pack of 10) (s PDV-om)
10
KM 2,79
Each (In a Pack of 10) (bez PDV-a)
KM 3,264
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 40 | KM 2,79 | KM 27,90 |
50 - 90 | KM 2,206 | KM 22,06 |
100 - 240 | KM 2,163 | KM 21,63 |
250 - 490 | KM 2,076 | KM 20,76 |
500+ | KM 2,011 | KM 20,11 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V