N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.1mm
Number of Elements per Chip
1
Transistor Material
Si
Length
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
Mexico
Detalji o proizvodu
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,30
komadno (u namotaju od 4000) (bez PDV-a)
€ 3,861
komadno (u namotaju od 4000) (s PDV-om)
4000
€ 3,30
komadno (u namotaju od 4000) (bez PDV-a)
€ 3,861
komadno (u namotaju od 4000) (s PDV-om)
4000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
375 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.1mm
Number of Elements per Chip
1
Transistor Material
Si
Length
9.15mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
Mexico
Detalji o proizvodu
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda