N-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220AB Infineon IRFB7446PBF

RS kataloški broj:: 776-9181robna marka: InfineonProizvođački broj:: IRFB7446PBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

99 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Width

4.83mm

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 4,43

Each (bez PDV-a)

KM 5,18

Each (s PDV-om)

N-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220AB Infineon IRFB7446PBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 4,43
2KM 8,87
3KM 13,30
4KM 17,74
5KM 22,17
6KM 26,60
7KM 31,04
8KM 35,47
9KM 39,91
10KM 44,34
11KM 48,77
12KM 53,21
13KM 57,64
14KM 62,08
15KM 66,51

KM 4,43

Each (bez PDV-a)

KM 5,18

Each (s PDV-om)

N-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220AB Infineon IRFB7446PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 4,43
2KM 8,87
3KM 13,30
4KM 17,74
5KM 22,17
6KM 26,60
7KM 31,04
8KM 35,47
9KM 39,91
10KM 44,34
11KM 48,77
12KM 53,21
13KM 57,64
14KM 62,08
15KM 66,51

Kupujte na veliko

količinaJedinična cijena
1 - 24KM 4,43
25 - 49KM 4,02
50 - 99KM 3,91
100 - 249KM 3,81
250+KM 3,68

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PRIDRUŽITE SE BESPLATNO

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design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

99 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Width

4.83mm

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više