N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF

RS kataloški broj:: 820-8833robna marka: InfineonProizvođački broj:: IRFB7530PBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 13,89

KM 6,943 Each (In a Pack of 2) (bez PDV-a)

KM 16,25

KM 8,123 Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 13,89
4KM 27,77
6KM 41,66
8KM 55,54
10KM 69,43
12KM 83,31
14KM 97,20
16KM 111,09
18KM 124,97
20KM 125,45
22KM 137,99
24KM 150,54
26KM 163,08
28KM 175,63
30KM 188,17

KM 13,89

KM 6,943 Each (In a Pack of 2) (bez PDV-a)

KM 16,25

KM 8,123 Each (In a Pack of 2) (s PDV-om)

N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB Infineon IRFB7530PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 2.

Proizvodnja -

Dostupno u više komada 2.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

2

Dostupno u više komada 2
2KM 13,89
4KM 27,77
6KM 41,66
8KM 55,54
10KM 69,43
12KM 83,31
14KM 97,20
16KM 111,09
18KM 124,97
20KM 125,45
22KM 137,99
24KM 150,54
26KM 163,08
28KM 175,63
30KM 188,17

Kupujte na veliko

količinaJedinična cijenaPo pakovanje
2 - 18KM 6,943KM 13,89
20 - 48KM 6,272KM 12,54
50 - 98KM 6,164KM 12,33
100 - 198KM 5,97KM 11,94
200+KM 5,71KM 11,42

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više
You may be interested in