N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF

RS kataloški broj:: 541-1613robna marka: InfineonProizvođački broj:: IRFU120NPBF
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Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Minimum Operating Temperature

-55 °C

Height

6.1mm

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

KM 2,77

Each (bez PDV-a)

KM 3,24

Each (s PDV-om)

N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF

1

Dostupno u više komada 1
1KM 2,77
2KM 5,54
3KM 8,31
4KM 11,07
5KM 13,84
6KM 16,61
7KM 19,38
8KM 22,15
9KM 24,92
10KM 27,69
11KM 30,45
12KM 33,22
13KM 35,99
14KM 38,76
15KM 41,53

KM 2,77

Each (bez PDV-a)

KM 3,24

Each (s PDV-om)

N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK Infineon IRFU120NPBF
Informacije o stanju skladišta trenutno nisu dostupne.

1

Dostupno u više komada 1
1KM 2,77
2KM 5,54
3KM 8,31
4KM 11,07
5KM 13,84
6KM 16,61
7KM 19,38
8KM 22,15
9KM 24,92
10KM 27,69
11KM 30,45
12KM 33,22
13KM 35,99
14KM 38,76
15KM 41,53

Kupujte na veliko

količinaJedinična cijena
1 - 24KM 2,77
25+KM 2,66

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

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  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.4 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.6mm

Minimum Operating Temperature

-55 °C

Height

6.1mm

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više