Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Series
CoolMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Height
16.15mm
Minimum Operating Temperature
-55 °C
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 17,952
Each (In a Pack of 2) (bez PDV-a)
KM 21,004
Each (In a Pack of 2) (s PDV-om)
2
KM 17,952
Each (In a Pack of 2) (bez PDV-a)
KM 21,004
Each (In a Pack of 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 17,952 | KM 35,90 |
10 - 18 | KM 17,303 | KM 34,61 |
20 - 48 | KM 16,222 | KM 32,44 |
50 - 98 | KM 15,248 | KM 30,50 |
100+ | KM 14,924 | KM 29,85 |
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Series
CoolMOS™
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Height
16.15mm
Minimum Operating Temperature
-55 °C