P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1

RS kataloški broj:: 898-6864robna marka: InfineonProizvođački broj:: SPD30P06PGBTMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 44,34

KM 4,434 Each (In a Pack of 10) (bez PDV-a)

KM 51,88

KM 5,188 Each (In a Pack of 10) (s PDV-om)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 44,34
20KM 88,68
30KM 133,02
40KM 177,36
50KM 213,05
60KM 255,65
70KM 298,26
80KM 340,87
90KM 383,48
100KM 426,09
110KM 468,70
120KM 511,31
130KM 553,92
140KM 596,53
150KM 639,14

KM 44,34

KM 4,434 Each (In a Pack of 10) (bez PDV-a)

KM 51,88

KM 5,188 Each (In a Pack of 10) (s PDV-om)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 44,34
20KM 88,68
30KM 133,02
40KM 177,36
50KM 213,05
60KM 255,65
70KM 298,26
80KM 340,87
90KM 383,48
100KM 426,09
110KM 468,70
120KM 511,31
130KM 553,92
140KM 596,53
150KM 639,14

Kupujte na veliko

količinaJedinična cijenaPo pakovanje
10 - 40KM 4,434KM 44,34
50 - 240KM 4,261KM 42,61
250 - 490KM 3,677KM 36,77
500 - 1240KM 3,352KM 33,52
1250+KM 2,769KM 27,69

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više