Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,407
Each (Supplied in a Tube) (bez PDV-a)
KM 6,326
Each (Supplied in a Tube) (s PDV-om)
5
KM 5,407
Each (Supplied in a Tube) (bez PDV-a)
KM 6,326
Each (Supplied in a Tube) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
5 - 20 | KM 5,407 | KM 27,04 |
25+ | KM 5,299 | KM 26,50 |
Tehnička dokumentacija
Tehnički podaci
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
500 mA
Maximum Drain Source Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
25 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
15 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.7mm
Width
4.826mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.