Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
KM 4,40
KM 0,176 Each (In a Pack of 25) (bez PDV-a)
KM 5,15
KM 0,206 Each (In a Pack of 25) (s PDV-om)
Standard
25
KM 4,40
KM 0,176 Each (In a Pack of 25) (bez PDV-a)
KM 5,15
KM 0,206 Each (In a Pack of 25) (s PDV-om)
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
količina | Jedinična cijena | Po pakovanje |
---|---|---|
25 - 125 | KM 0,176 | KM 4,40 |
150+ | KM 0,078 | KM 1,96 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu