Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-65 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,389
Each (On a Reel of 3000) (bez PDV-a)
KM 0,455
Each (On a Reel of 3000) (s PDV-om)
3000
KM 0,389
Each (On a Reel of 3000) (bez PDV-a)
KM 0,455
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-65 °C
Zemlja podrijetla
China
Detalji o proizvodu