Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,735
Each (Supplied on a Reel) (bez PDV-a)
KM 0,86
Each (Supplied on a Reel) (s PDV-om)
40
KM 0,735
Each (Supplied on a Reel) (bez PDV-a)
KM 0,86
Each (Supplied on a Reel) (s PDV-om)
40
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
40 - 360 | KM 0,735 | KM 29,42 |
400+ | KM 0,303 | KM 12,11 |
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalji o proizvodu