Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
Philippines
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,191
Each (Supplied as a Tape) (bez PDV-a)
KM 6,073
Each (Supplied as a Tape) (s PDV-om)
Standard
5
KM 5,191
Each (Supplied as a Tape) (bez PDV-a)
KM 6,073
Each (Supplied as a Tape) (s PDV-om)
Standard
5
Tehnička dokumentacija
Tehnički podaci
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Width
4.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
Philippines
Detalji o proizvodu