Tehnička dokumentacija
Tehnički podaci
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
10 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
8500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+175 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
P.O.A.
10
P.O.A.
10
Tehnička dokumentacija
Tehnički podaci
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
10 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
8500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+175 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu