Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Provjerite ponovno kasnije.
P.O.A.
50
P.O.A.
50
Tehnička dokumentacija
Tehnički podaci
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
15.87mm
Zemlja podrijetla
Korea, Republic Of
Detalji o proizvodu