Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,146
Each (Supplied on a Reel) (bez PDV-a)
KM 1,341
Each (Supplied on a Reel) (s PDV-om)
25
KM 1,146
Each (Supplied on a Reel) (bez PDV-a)
KM 1,341
Each (Supplied on a Reel) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
25 - 100 | KM 1,146 | KM 28,66 |
125 - 225 | KM 1,06 | KM 26,50 |
250 - 600 | KM 0,973 | KM 24,33 |
625 - 1225 | KM 0,865 | KM 21,63 |
1250+ | KM 0,692 | KM 17,30 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.