Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.04mm
Typical Gate Charge @ Vgs
2.2 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.01mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.2V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,26
Each (On a Reel of 3000) (bez PDV-a)
KM 0,304
Each (On a Reel of 3000) (s PDV-om)
3000
KM 0,26
Each (On a Reel of 3000) (bez PDV-a)
KM 0,304
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
3000 - 6000 | KM 0,26 | KM 778,64 |
9000+ | KM 0,216 | KM 648,87 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.04mm
Typical Gate Charge @ Vgs
2.2 nC @ 10 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.01mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.2V
Zemlja podrijetla
China