Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 55,154
Each (In a Tube of 450) (bez PDV-a)
KM 64,53
Each (In a Tube of 450) (s PDV-om)
450
KM 55,154
Each (In a Tube of 450) (bez PDV-a)
KM 64,53
Each (In a Tube of 450) (s PDV-om)
450
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
595 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Length
15.8mm
Typical Gate Charge @ Vgs
222 nC @ 10 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
22.74mm
Forward Diode Voltage
1.2V
Zemlja podrijetla
China