Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
181 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
KM 10,382
Each (In a Tube of 50) (bez PDV-a)
KM 12,147
Each (In a Tube of 50) (s PDV-om)
50
KM 10,382
Each (In a Tube of 50) (bez PDV-a)
KM 12,147
Each (In a Tube of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 10,382 | KM 519,10 |
100 - 200 | KM 8,435 | KM 421,77 |
250 - 450 | KM 8,219 | KM 410,95 |
500 - 950 | KM 8,111 | KM 405,54 |
1000+ | KM 7,354 | KM 367,69 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
181 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
16.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China