N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-3PN onsemi FDA69N25

RS kataloški broj:: 809-0792Probna marka: onsemiProizvođački broj:: FDA69N25
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

250 V

Series

UniFET

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.8mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Width

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.1mm

Detalji o proizvodu

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

KM 15,14

Each (Supplied in a Tube) (bez PDV-a)

KM 17,71

Each (Supplied in a Tube) (s PDV-om)

N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-3PN onsemi FDA69N25
Odaberite vrstu pakovanja

Proizvodno pakovanje (cijev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 15,14
2KM 30,28
3KM 45,42
4KM 60,56
5KM 57,86
6KM 69,43
7KM 81,00
8KM 92,57
9KM 104,14
10KM 110,31
11KM 121,34
12KM 132,37
13KM 143,40
14KM 154,43
15KM 165,46

KM 15,14

Each (Supplied in a Tube) (bez PDV-a)

KM 17,71

Each (Supplied in a Tube) (s PDV-om)

N-Channel MOSFET, 69 A, 250 V, 3-Pin TO-3PN onsemi FDA69N25
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakovanja

Proizvodno pakovanje (cijev)

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1KM 15,14
2KM 30,28
3KM 45,42
4KM 60,56
5KM 57,86
6KM 69,43
7KM 81,00
8KM 92,57
9KM 104,14
10KM 110,31
11KM 121,34
12KM 132,37
13KM 143,40
14KM 154,43
15KM 165,46

Kupujte na veliko

količinaJedinična cijena
1 - 4KM 15,14
5 - 9KM 11,57
10 - 49KM 11,03
50 - 99KM 10,81
100+KM 10,27

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design-spark
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  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

250 V

Series

UniFET

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.8mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Width

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.1mm

Detalji o proizvodu

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više