Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 5,083
Each (In a Tube of 800) (bez PDV-a)
KM 5,947
Each (In a Tube of 800) (s PDV-om)
800
KM 5,083
Each (In a Tube of 800) (bez PDV-a)
KM 5,947
Each (In a Tube of 800) (s PDV-om)
800
Kupujte na veliko
količina | Jedinična cijena | Po cijev |
---|---|---|
800 - 800 | KM 5,083 | KM 4.066,25 |
1600+ | KM 4,434 | KM 3.547,16 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Zemlja podrijetla
China