N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50

RS kataloški broj:: 124-1750robna marka: onsemiProizvođački broj:: FDPF18N50
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Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Series

UniFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Height

9.19mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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KM 7,246

Each (In a Tube of 50) (bez PDV-a)

KM 8,478

Each (In a Tube of 50) (s PDV-om)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50

KM 7,246

Each (In a Tube of 50) (bez PDV-a)

KM 8,478

Each (In a Tube of 50) (s PDV-om)

N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinaJedinična cijenaPo cijev
50 - 200KM 7,246KM 362,29
250+KM 6,381KM 319,03

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design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
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Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Series

UniFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Height

9.19mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više