Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
RSD 10.908
RSD 218,16 komad (isporučivo u Reel) (bez PDV-a)
RSD 13.090
RSD 261,792 komad (isporučivo u Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
50
RSD 10.908
RSD 218,16 komad (isporučivo u Reel) (bez PDV-a)
RSD 13.090
RSD 261,792 komad (isporučivo u Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (kolut)
50
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | Jedinična cena | Po kolut |
|---|---|---|
| 50 - 95 | RSD 218,16 | RSD 1.091 |
| 100 - 495 | RSD 195,952 | RSD 980 |
| 500 - 995 | RSD 180,276 | RSD 901 |
| 1000+ | RSD 169,825 | RSD 849 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.5mm
Detalji o proizvodu
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


