Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,125
Each (Supplied on a Reel) (bez PDV-a)
KM 1,316
Each (Supplied on a Reel) (s PDV-om)
20
KM 1,125
Each (Supplied on a Reel) (bez PDV-a)
KM 1,316
Each (Supplied on a Reel) (s PDV-om)
20
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
20 - 80 | KM 1,125 | KM 22,49 |
100 - 180 | KM 0,584 | KM 11,68 |
200 - 980 | KM 0,519 | KM 10,38 |
1000 - 1980 | KM 0,476 | KM 9,52 |
2000+ | KM 0,454 | KM 9,08 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.6 nC @ 4 V
Transistor Material
Si
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Zemlja podrijetla
China
Detalji o proizvodu