Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Maximum Operating Temperature
+150 °C
Length
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Number of Elements per Chip
1
Width
1.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Detalji o proizvodu
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,887
Each (In a Pack of 10) (bez PDV-a)
KM 1,038
Each (In a Pack of 10) (s PDV-om)
10
KM 0,887
Each (In a Pack of 10) (bez PDV-a)
KM 1,038
Each (In a Pack of 10) (s PDV-om)
10
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
10 - 90 | KM 0,887 | KM 8,87 |
100 - 190 | KM 0,627 | KM 6,27 |
200 - 740 | KM 0,411 | KM 4,11 |
750 - 1490 | KM 0,389 | KM 3,89 |
1500+ | KM 0,346 | KM 3,46 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Maximum Operating Temperature
+150 °C
Length
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Number of Elements per Chip
1
Width
1.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Detalji o proizvodu