Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 2,487
Each (Supplied as a Tape) (bez PDV-a)
KM 2,91
Each (Supplied as a Tape) (s PDV-om)
25
KM 2,487
Each (Supplied as a Tape) (bez PDV-a)
KM 2,91
Each (Supplied as a Tape) (s PDV-om)
25
Kupujte na veliko
količina | Jedinična cijena | Po traka |
---|---|---|
25 - 25 | KM 2,487 | KM 62,18 |
50 - 100 | KM 1,903 | KM 47,58 |
125+ | KM 1,492 | KM 37,31 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Detalji o proizvodu