onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Width
1.35mm
Transistor Material
Si
Length
2.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
KM 16,82
KM 0,841 Each (Supplied on a Reel) (bez PDV-a)
KM 19,68
KM 0,984 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
KM 16,82
KM 0,841 Each (Supplied on a Reel) (bez PDV-a)
KM 19,68
KM 0,984 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakovanje (kolut)
20
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Width
1.35mm
Transistor Material
Si
Length
2.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda