Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 17,628
Each (In a Pack of 5) (bez PDV-a)
KM 20,625
Each (In a Pack of 5) (s PDV-om)
5
KM 17,628
Each (In a Pack of 5) (bez PDV-a)
KM 20,625
Each (In a Pack of 5) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
5 - 5 | KM 17,628 | KM 88,14 |
10 - 95 | KM 15,248 | KM 76,24 |
100 - 245 | KM 12,761 | KM 63,81 |
250 - 495 | KM 12,437 | KM 62,18 |
500+ | KM 12,22 | KM 61,10 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.1mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm