Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.94mm
Detalji o proizvodu
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,081
Each (Supplied on a Reel) (bez PDV-a)
KM 1,265
Each (Supplied on a Reel) (s PDV-om)
2
KM 1,081
Each (Supplied on a Reel) (bez PDV-a)
KM 1,265
Each (Supplied on a Reel) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
2 - 98 | KM 1,081 | KM 2,16 |
100 - 198 | KM 1,06 | KM 2,12 |
200 - 998 | KM 0,887 | KM 1,77 |
1000+ | KM 0,844 | KM 1,69 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Minimum Operating Temperature
-55 °C
Height
0.94mm
Detalji o proizvodu