Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Detalji o proizvodu
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 0,779
Each (In a Pack of 50) (bez PDV-a)
KM 0,911
Each (In a Pack of 50) (s PDV-om)
50
KM 0,779
Each (In a Pack of 50) (bez PDV-a)
KM 0,911
Each (In a Pack of 50) (s PDV-om)
50
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
50 - 450 | KM 0,779 | KM 38,93 |
500 - 1200 | KM 0,735 | KM 36,77 |
1250 - 2450 | KM 0,714 | KM 35,69 |
2500 - 4950 | KM 0,692 | KM 34,61 |
5000+ | KM 0,67 | KM 33,52 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Detalji o proizvodu