Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
18 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
2.38mm
Series
NVD5C688NL-D
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 3,72
Each (In a Pack of 10) (bez PDV-a)
KM 4,352
Each (In a Pack of 10) (s PDV-om)
10
KM 3,72
Each (In a Pack of 10) (bez PDV-a)
KM 4,352
Each (In a Pack of 10) (s PDV-om)
10
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
18 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
2.38mm
Series
NVD5C688NL-D
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalji o proizvodu