Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Philippines
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 22,17
Each (On a Reel of 3000) (bez PDV-a)
KM 25,939
Each (On a Reel of 3000) (s PDV-om)
3000
KM 22,17
Each (On a Reel of 3000) (bez PDV-a)
KM 25,939
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
433 A
Maximum Drain Source Voltage
40 V
Package Type
DFNW8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
630 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
205 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
8.1mm
Typical Gate Charge @ Vgs
99 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Zemlja podrijetla
Philippines