Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 10,814
Each (In a Pack of 2) (bez PDV-a)
KM 12,652
Each (In a Pack of 2) (s PDV-om)
2
KM 10,814
Each (In a Pack of 2) (bez PDV-a)
KM 12,652
Each (In a Pack of 2) (s PDV-om)
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 10,814 | KM 21,63 |
10 - 98 | KM 9,30 | KM 18,60 |
100+ | KM 7,786 | KM 15,57 |
Tehnička dokumentacija
Tehnički podaci
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Zemlja podrijetla
China