STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32

Name: STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32
Brand: STMicroelectronics
SKU: 1686075
Availability: LimitedAvailability

RS kataloški broj:: 168-6075brend: STMicroelectronicsProizvođački broj:: BD139

Prikaži sve u Bipolar Transistors

Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

80 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

1.25 W

Minimum DC Current Gain

100, 40, 63

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Pin Count

Number of Elements per Chip

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

General Purpose NPN Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Informacije o stanju skladišta trenutno nisu dostupne.

RSD 2.482

RSD 49,641 komad (u Tubi od 50) (bez PDV-a)

RSD 2.978

RSD 59,569 komad (u Tubi od 50) (s PDV-om)

STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32

RSD 2.482

RSD 49,641 komad (u Tubi od 50) (bez PDV-a)

RSD 2.978

RSD 59,569 komad (u Tubi od 50) (s PDV-om)

STMicroelectronics BD139 NPN Transistor, 3 A, 80 V, 3-Pin SOT-32

Informacije o stanju skladišta trenutno nisu dostupne.

Proverite ponovno kasnije.

količina	Jedinična cena	Po cev
50 - 50	RSD 49,641	RSD 2.482
100 - 450	RSD 35,271	RSD 1.764
500 - 950	RSD 30,046	RSD 1.502
1000 - 1950	RSD 24,821	RSD 1.241
2000+	RSD 22,208	RSD 1.110

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Transistor Type

NPN

Maximum DC Collector Current

3 A

Maximum Collector Emitter Voltage

80 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

1.25 W

Minimum DC Current Gain

100, 40, 63

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Pin Count

Number of Elements per Chip

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Detalji o proizvodu

General Purpose NPN Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.