N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2

RS kataloški broj:: 165-5377robna marka: STMicroelectronicsProizvođački broj:: STD13N65M2
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Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

2.4mm

Forward Diode Voltage

1.6V

Zemlja podrijetla

China

Detalji o proizvodu

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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KM 8.002,73

KM 3,201 Each (On a Reel of 2500) (bez PDV-a)

KM 9.363,19

KM 3,745 Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2

KM 8.002,73

KM 3,201 Each (On a Reel of 2500) (bez PDV-a)

KM 9.363,19

KM 3,745 Each (On a Reel of 2500) (s PDV-om)

N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STMicroelectronics STD13N65M2
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

2.4mm

Forward Diode Voltage

1.6V

Zemlja podrijetla

China

Detalji o proizvodu

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više