Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 7,354
Each (Supplied on a Reel) (bez PDV-a)
KM 8,604
Each (Supplied on a Reel) (s PDV-om)
5
KM 7,354
Each (Supplied on a Reel) (bez PDV-a)
KM 8,604
Each (Supplied on a Reel) (s PDV-om)
5
Kupujte na veliko
količina | Jedinična cijena | Po kolut |
---|---|---|
5 - 5 | KM 7,354 | KM 36,77 |
10 - 95 | KM 6,381 | KM 31,90 |
100 - 495 | KM 5,191 | KM 25,95 |
500+ | KM 4,758 | KM 23,79 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
425 V
Maximum Gate Emitter Voltage
±16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.