Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Detalji o proizvodu
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 16,287
Each (In a Pack of 2) (bez PDV-a)
KM 19,056
Each (In a Pack of 2) (s PDV-om)
Standard
2
KM 16,287
Each (In a Pack of 2) (bez PDV-a)
KM 19,056
Each (In a Pack of 2) (s PDV-om)
Standard
2
Kupujte na veliko
količina | Jedinična cijena | Po pakovanje |
---|---|---|
2 - 8 | KM 16,287 | KM 32,57 |
10 - 18 | KM 15,508 | KM 31,02 |
20 - 48 | KM 15,335 | KM 30,67 |
50 - 98 | KM 15,054 | KM 30,11 |
100+ | KM 14,902 | KM 29,80 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Width
15.8mm
Transistor Material
Si
Height
4.8mm
Detalji o proizvodu