N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG

Name: N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG
Brand: STMicroelectronics
SKU: 1116467

RS kataloški broj:: 111-6467robna marka: STMicroelectronicsProizvođački broj:: STH410N4F7-6AG

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Series

STripFET F7

Package Type

H2PAK

Mounting Type

Surface Mount

Pin Count

6 + Tab

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

365 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

Maximum Operating Temperature

+175 °C

Length

8.9mm

Typical Gate Charge @ Vgs

141 nC @ 10 V

Width

10.4mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

4.8mm

Detalji o proizvodu

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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P.O.A.

N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG

Odaberite vrstu pakovanja

Standard

P.O.A.

N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STMicroelectronics STH410N4F7-6AG

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

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Tehnička dokumentacija

Tehnički podaci

Brand

STMicroelectronics

Channel Type

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

40 V

Series

STripFET F7

Package Type

H2PAK

Mounting Type

Surface Mount

Pin Count

6 + Tab

Maximum Drain Source Resistance

1.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

365 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

Maximum Operating Temperature

+175 °C

Length

8.9mm

Typical Gate Charge @ Vgs

141 nC @ 10 V

Width

10.4mm

Transistor Material

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

4.8mm

Detalji o proizvodu

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.