Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
KM 206,34
KM 4,127 Each (In a Tube of 50) (bez PDV-a)
KM 241,42
KM 4,829 Each (In a Tube of 50) (s PDV-om)
50
KM 206,34
KM 4,127 Each (In a Tube of 50) (bez PDV-a)
KM 241,42
KM 4,829 Each (In a Tube of 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Informacije o stanju skladišta trenutno nisu dostupne.
količina | Jedinična cijena | Po cijev |
---|---|---|
50 - 50 | KM 4,127 | KM 206,34 |
100 - 450 | KM 3,286 | KM 164,29 |
500 - 950 | KM 2,855 | KM 142,77 |
1000 - 4950 | KM 2,503 | KM 125,17 |
5000+ | KM 2,445 | KM 122,24 |
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu