Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 227,10
KM 4,542 Each (In a Tube of 50) (bez PDV-a)
KM 265,71
KM 5,314 Each (In a Tube of 50) (s PDV-om)
50
KM 227,10
KM 4,542 Each (In a Tube of 50) (bez PDV-a)
KM 265,71
KM 5,314 Each (In a Tube of 50) (s PDV-om)
50
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.