STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 STP140N6F7
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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RSD 2.031
RSD 406,275 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.438
RSD 487,53 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
RSD 2.031
RSD 406,275 komadno (u pakovanju od 5) (bez PDV-a)
RSD 2.438
RSD 487,53 komadno (u pakovanju od 5) (s PDV-om)
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
| količina | Jedinična cena | Po pakovanje |
|---|---|---|
| 5 - 20 | RSD 406,275 | RSD 2.031 |
| 25 - 45 | RSD 391,905 | RSD 1.960 |
| 50 - 120 | RSD 367,084 | RSD 1.835 |
| 125 - 245 | RSD 344,876 | RSD 1.724 |
| 250+ | RSD 339,651 | RSD 1.698 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda