Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
RSD 8.557
RSD 8.557 komad (isporucivo u Tubi) (bez PDV-a)
RSD 10.268
RSD 10.268 komad (isporucivo u Tubi) (s PDV-om)
Proizvodno pakovanje (cev)
1
RSD 8.557
RSD 8.557 komad (isporucivo u Tubi) (bez PDV-a)
RSD 10.268
RSD 10.268 komad (isporucivo u Tubi) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakovanje (cev)
1
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
Max247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Length
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.3mm
Forward Diode Voltage
1.5V
Zemlja podrijetla
China
Detalji o proizvodu


