N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G

Name: N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G
Brand: Taiwan Semiconductor
SKU: 1713613

RS kataloški broj:: 171-3613robna marka: Taiwan SemiconductorProizvođački broj:: TSM1NB60CH C5G

Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

Typical Gate Charge @ Vgs

6.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.6mm

Height

6.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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Provjerite ponovno kasnije.

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P.O.A.

N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G

1875

P.O.A.

N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi TSM1NB60CH C5G

Informacije o stanju skladišta trenutno nisu dostupne.

1875

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Tehnička dokumentacija

Tehnički podaci

Brand

Taiwan Semiconductor

Channel Type

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

Typical Gate Charge @ Vgs

6.1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.6mm

Height

6.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V