Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Detalji o proizvodu
Dual N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
KM 1,19
Each (In a Pack of 50) (bez PDV-a)
KM 1,392
Each (In a Pack of 50) (s PDV-om)
50
KM 1,19
Each (In a Pack of 50) (bez PDV-a)
KM 1,392
Each (In a Pack of 50) (s PDV-om)
50
Tehnička dokumentacija
Tehnički podaci
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
TSSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.04 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
4.5mm
Width
3.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.05mm
Detalji o proizvodu